GaAs pНЕМТ транзисторы (МКШУ.460871.048 ТУ)
Наименование |
Аналог |
ΔF, ГГц |
P1дБ, Вт |
Ку, дБ |
Uси |
Iси.нач |
Примечание |
|---|---|---|---|---|---|---|---|
| МС14-2 | BCP080C, BCP120C, AM010WH2, MwT-PH8F, MwT-PH31F |
0 – 18
|
1,1*
|
8,0*
|
8,0
|
0,6
|
производство
|
| МС24С | TGF2160, BCP160C, BCP240C, TGF2022-24, FLK207XV, FLX257XV |
0 – 18
|
1,9*
|
7,5*
|
8,0
|
1,0
|
производство
|
| МС24-2С | TGF2160, BCP160C, BCP240C, TGF2022-24, FLK207XV, FLX257XV |
0 – 18
|
1,9*
|
7,5*
|
8,0
|
1,0
|
производство
|
| МС27-1 | FLX257XV, BCP240C, TGF2022-24 |
0 – 18
|
2,2*
|
7,2*
|
8,0
|
1,2
|
производство
|
| МС27-1С | FLX257XV, BCP240C, TGF2022-24 |
0 – 18
|
2,2*
|
7,2*
|
8,0
|
1,2
|
производство
|
| МС28С | FLX257XV, FLC167WF |
0 – 18
|
2,2*
|
7,0*
|
8,0
|
1,3
|
производство
|
| МС36-2С | TGF2021-04, AM030WH2 |
0 – 14
|
2,8**
|
7,2**
|
8,0
|
1,5
|
производство
|
| МС40С | TGF2021-04, AM030WH2 |
0 – 14
|
3,2**
|
7,0**
|
8,0
|
1,8
|
производство
|
* Fизм = 18 ГГц; ** Fизм = 14 ГГц
