Alexey Radchenko, Sergey Garmash, Andrei Kishchinsky
This paper presents a 1 – 6 GHz, 35 W high efficiency GaN-HEMT balanced power amplifier utilizing an innovative topology ultra-wideband 3-dB quadrature couplers. Load-pull analyses through simulations as well as simple-model output matching design are applied to driver and output stages design. New topology of small-size quadrature thin-film 3-dB couplers are realized to form the balanced configuration.
The report describes the design and characteristics of an ultra-wideband solid-state microwave power amplifier based on modern monolithic integrated circuits, providing output power of more than 12 - 16 W and efficiency of 14 to 20% in the operating frequency range from 5 to 18 GHz.
The paper includes the analysis of technical and technological solutions used in the design of ultra-wideband transistor microwave power amplifiers, as well as modern technologies and schemes for constructing monolithic integrated power amplifiers. The matters of design of high-power amplifiers and parameters achieved during development and production of amplifiers are reviewed in the publication.
A number of the modern electronic systems applications require generation, processing, amplification, and emission of signals that have a continuous broadband spectrum or modulated signals with a relatively narrow spectrum whose frequency may change in broad ranges. The first group of applications may include UWB systems of short distance data transmission, radar systems with UWB signals of different kinds (pulse, multi-frequency, or quasi-noise), RFID-systems, and a number of others. The second group includes electronic warfare (EW) systems, EMC-testing systems, as well as universal measuring and testing equipment.